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Infineon 650V CoolMOS™ N-Channel功率MOSFET

Infineon 650V CoolMOS™ N-Channel功率MOSFET, IPW65R041CFD

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode.

 

应用

  • Telecom

  • Server

  • Solar

  • HID lamp ballast

  • LED lighting

  • eMobility

 

特长​

  • 650V technology with integrated fast body diode

  • Limited voltage overshoot during hard commutation

  • Significant Q g reduction compared to 600V CFD technology

  • Tighter R DS(ON) max to R DS(on) typ window

  • Easy to design in

  • Lower price compared to 600V CFD technology

 

优势

  • Low switching losses due to low Q rr at repetitive commutation on body diode

  • Self limiting di/dt and dv/dt

  • Low Q oss

  • Reduced turn on and turn of delay times

  • Outstanding CoolMOS™ quality

Infineon

650V CoolMOS™ N-Channel Power MOSFET

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs 

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